Objective of this experiment:
1. To investigate the characteristics of typical germanium and silicon semiconductor diodes, plotting voltage - current curves and find out the knee of the curve in each case.
2. To find that there is no linearity below the knee and there is linearity above the knee.
3. To find that the forward bias voltage across the germanium diode is around 0.3 V and that of the silicon diode is about 0.6 V to 0.7 Volts.
4. To observe that the forward voltage varies in proportion to the forward current, although not very significant.
5. To measure the leakage currents in these diodes by reverse biasing, although they are not very significant.
6. To test diodes with an ohmmeter.

NO POWER SUPPLY IS REQUIRED, since it is constructed out of passive components.
Dimension: 27cms x 17cms x 10cms.
Weight: 500gms

Objective of this experiment:
1. To determine the current gain (alpha) of a common-base transistor.
2. To determine alpha cutoff frequency.
3. To measure IBC collector- Base current.
4. To determine the current gain (beta) of a common emitter transistor.
5. To determine beta cutoff resistance of a common-collector transistor circuit.
6. To determine alpha, when beta is known and vice-versa.
7. This trainer has got common base, common collector & common emitter configuration of both NPN & PNP transistor.

Built in regulated power supply: + 15V/300mA, -15 V/300mA
Input Supply: 230 VAC/50Hz mains operated.
Dimension: 27cms x 17cms x 10cms.
Weight: 500gms

Objective of this experiment:
1. 1. To demonstrate the operation of a field effect Transistor (FET) characteristic and testing methods.
2. To examine the relationship between the gate-to-source voltage (VGS), and drain current (ID) and the drain-to-source voltage (VDS) in an N-channel junction FET.
3. To measure and record the corresponding VGS, ID and VDS values and then plot these values to form a set of drain characteristic curves.
4. To complete the experiment by using these curves to determine the trans-conductance of the FET.

Built in regulated power supply: + 15V/300mA, -15 V/300mA
Input Supply: 230 VAC/50Hz mains operated.
Dimension: 27cms x 17cms x 10cms.
Weight: 500gms

Objective of this experiment:
To demonstrate the operation of a typical insulated gate FET. You will examine the relationship between the gate-to source voltage(VGS)the gate drain current (ID) and the drain-to-source voltage (VDS)in a N-channel, depletion mode IGFET. You will measure the corresponding VGS, ID and VDS values and graphically plot them to form a set of drain characteristic values.

Built in regulated power supply: +15V/300mA, -1 5V/300mA.
Input Supply: 230 VAC/50Hz mains operated.
Dimension: 27cms x 17cms x 10cms.
Weight: 500gms